fes(f,b)8at thru fes(f,b)8jt vishay general semiconductor document number: 88600 revision: 07-nov-07 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 ultrafast plastic rectifier features ? glass passivated chip junction ? ultrafast recovery time ? low switching losses, high efficiency ? low leakage current ? high forward surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for to-263ab package) ? solder dip 260 c, 40 s (for to-220ac and ito-220ac package) ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. mechanical data case: to-220ac, ito-220ac, to-263ab epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meests jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 8.0 a v rrm 50 v to 600 v i fsm 125 a t rr 35 ns, 50 ns v f 0.95 v, 1.30 v, 1.50 v t j max. 150 c case pin 2 pin 1 fes8xt fesb8xt pin 1 pin 2 k heatsink 1 2 1 2 k fesf8xt pin 2 pin 1 to-263ab to-220ac ito-220ac 1 2 maximum ratings (t c = 25 c unless otherwise noted) parameter symbol fes 8at fes 8bt fes 8ct fes 8dt fes 8ft fes 8gt fes 8ht fes 8jt unit maximum repetitive peak reverse voltage v rrm 50 100 150 200 300 400 500 600 v maximum rms voltage v rms 35 70 105 140 210 280 350 420 v maximum dc blocking voltage v dc 50 100 150 200 300 400 500 600 v maximum average forward rectified current at t c = 100 c i f(av) 8.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 125 a operating storage and temperature range t j , t stg - 55 to + 150 c isolation voltage (ito-220ac only) from terminal to heatsink t = 1 min v ac 1500 v
fes(f,b)8at thru fes(f,b)8jt vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88600 revision: 07-nov-07 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) automotive grade aec q101 qualified electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditions symbol fes 8at fes 8bt fes 8ct fes 8dt fes 8ft fes 8gt fes 8ht fes 8jt unit maximum instantaneous forward voltage (1) 8.0 a v f 0.95 1.3 1.5 v maximum dc reverse current at rated dc blocking voltage t c = 25 c t c = 100 c i r 10 500 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 35 50 ns typical junction capacitance 4.0 v, 1 mhz c j 85 50 pf thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol fes fesf fesb unit typical thermal resistance from junction to case r jc 2.2 5.0 2.2 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-220ac fes8jt-e3/45 1.80 45 50/tube tube ito-220ac fesf8jt-e3/45 1.85 45 50/tube tube to-263ab fesb8jt-e3/45 1.33 45 50/tube tube to-263ab fesb8jt-e3/81 1.33 81 800/reel tape and reel to-220ac fes8jthe3/45 (1) 1.80 45 50/tube tube ito-220ac fesf8jthe3/45 (1) 1.85 45 50/tube tube to-263ab fesb8jthe3/45 (1) 1.33 45 50/tube tube to-263ab fesb8jthe3/81 (1) 1.33 81 800/reel tape and reel
fes(f,b)8at thru fes(f,b)8jt vishay general semiconductor document number: 88600 revision: 07-nov-07 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 ratings and characteristics curves (t a = 25 c unless otherwise noted) figure 1. maximum forward current derating curve figure 2. maximum non-repetitive peak forward surge current figure 3. typical instantaneous forward characteristics 0 50 100 150 0 2 4 6 8 10 heatsink, case temperat u re, t c free air, am b ient temperat u re, t a resisti v e or ind u cti v e load a v erage for w ard re ctified c u rrent (a) temperat u re (c) 1 10 100 0 25 50 75 100 125 150 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t c = 100 c 8 .3 ms single half sine- w a v e 0.2 0.6 1.0 1.4 1. 8 0.1 1 10 100 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 50 - 200 v 300 - 400 v 500 - 600 v t j = 125 c t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle 2.0 0.4 0. 8 1.2 1.6 figure 4. typical reverse leakage characteristics figure 5. typical junction capacitance 0 20 40 60 8 0 100 0.01 0.1 1 10 100 50 - 200 v 500 - 600 v t j = 100 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse leakage c u rrent ( a) 0.1 1 10 100 10 100 1000 50 - 200 v 500 - 600 v re v erse v oltage ( v ) j u nction capaci tance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p
fes(f,b)8at thru fes(f,b)8jt vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88600 revision: 07-nov-07 4 package outline dimensions in inches (millimeters) to-220ac case pi n 2 pi n 1 0.635 (16.13) 0.625 (15. 8 7) 0.415 (10.54) max. 0.154 (3.91) dia. 0.14 8 (3.74) dia. 0.113 (2. 8 7) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) pi n 12 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.037 (0.94) 0.027 (0.6 8 ) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.560 (14.22) 0.530 (13.46) 0.110 (2.79) 0.100 (2.54) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.145 (3.6 8 ) 0.135 (3.43) 0.603 (15.32) 0.573 (14.55) 0.055 (1.39) 0.045 (1.14) 0.1 8 5 (4.70) 0.175 (4.44) ito-220ac pi n 1 2 0.025 (0.64) 0.015 (0.3 8 ) 0.404 (10.26) 0.3 8 4 (9.75) 0.076 (1.93) ref. 0.076 (1.93) ref. 45 ref. 0.600 (15.24) 0.5 8 0 (14.73) 0.560 (14.22) 0.530 (13.46) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.191 (4. 8 5) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.671 (17.04) 0.651 (16.54) 0.02 8 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 7 ref. 7 ref. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.140 (3.56) dia. 0.125 (3.17) dia. 0.135 (3.43) dia. 0.122 (3.0 8 ) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4. 8 3) 0.170 (4.32) to-263ab mo u nting pad layo u t 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.0 8 (2.032) mi n . 0.15 (3. 8 1) mi n . 0.33 ( 8 .3 8 ) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4. 8 3) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15. 8 5) 0.591 (15.00) 0.037 (0.940) 0.027 (0.6 8 6) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 ( 8 .13) 0.411 (10.45) 0.3 8 0 (9.65) 0.245 (6.22) mi n .
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